PartNumber | IXTA80N12T2 | IXTA80N10T | IXTA80N10T-TRL |
Description | MOSFET TrenchT2 MOSFETs Power MOSFETs | MOSFET 80 Amps 100V 13.0 Rds | MOSFET IXTA80N10T TRL |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-263-3 | TO-263-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 120 V | 105 V | - |
Id Continuous Drain Current | 80 A | 80 A | - |
Rds On Drain Source Resistance | 17 mOhms | 14 mOhms | - |
Configuration | Single | Single | - |
Tradename | HiPerFET | TrenchMV | Trench |
Packaging | Tube | Tube | Reel |
Series | IXTA80N12 | IXTA80N10 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | IXYS | IXYS | IXYS |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 50 | 50 | 800 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.056438 oz | 0.056438 oz | - |
RoHS | - | Y | Y |
Vgs th Gate Source Threshold Voltage | - | 5 V | - |
Vgs Gate Source Voltage | - | 20 V | - |
Qg Gate Charge | - | 60 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 175 C | - |
Pd Power Dissipation | - | 230 W | - |
Channel Mode | - | Enhancement | - |
Height | - | 4.83 mm | - |
Length | - | 9.65 mm | - |
Type | - | TrenchMV Power MOSFET | - |
Width | - | 10.41 mm | - |
Forward Transconductance Min | - | 33 S | - |
Fall Time | - | 48 ns | - |
Rise Time | - | 54 ns | - |
Typical Turn Off Delay Time | - | 40 ns | - |
Typical Turn On Delay Time | - | 31 ns | - |