PartNumber | IXTA160N04T2 | IXTA16N50P | IXTA160N10T7 |
Description | MOSFET 160Amps 40V | MOSFET 16.0 Amps 500 V 0.4 Ohm Rds | MOSFET 160 Amps 100V 6.9 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | TO-263-3 | TO-263-7 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 40 V | 500 V | 100 V |
Id Continuous Drain Current | 160 A | 16 A | 160 A |
Rds On Drain Source Resistance | 5 mOhms | 400 mOhms | 7 mOhms |
Vgs th Gate Source Threshold Voltage | 4 V | - | - |
Qg Gate Charge | 79 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 150 C | + 175 C |
Pd Power Dissipation | 250 W | 300 W | 430 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | HiPerFET | - | HiPerFET |
Packaging | Tube | Tube | Tube |
Product | TrenchT2 | - | - |
Series | IXTA160N04 | IXTA16N50 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | TrenchT2 Power MOSFET | - | - |
Brand | IXYS | IXYS | IXYS |
Forward Transconductance Min | 38 S, 62 S | 16 S | - |
Fall Time | 16 ns | 25 ns | 42 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 27 ns | 28 ns | 61 ns |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 19 ns | 70 ns | 49 ns |
Typical Turn On Delay Time | 10 ns | 24 ns | 33 ns |
Unit Weight | 0.081130 oz | 0.056438 oz | 0.056438 oz |
Vgs Gate Source Voltage | - | 30 V | - |
Height | - | 4.83 mm | 4.7 mm |
Length | - | 10.41 mm | 10.2 mm |
Width | - | 9.65 mm | 9.4 mm |