PartNumber | IXTA1R4N120P | IXTA1R4N100P | IXTA1R4N100PTRL |
Description | MOSFET 1.4 Amps 1200V 15 Rds | MOSFET 1.4 Amps 1000V 11 Rds | MOSFET DISC MOSFET N-CH STD-POLAR |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-263-3 | TO-263-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 1.2 kV | 1 kV | - |
Id Continuous Drain Current | 1.4 A | 1.4 A | - |
Rds On Drain Source Resistance | 10.5 Ohms | 11 Ohms | - |
Vgs th Gate Source Threshold Voltage | 4.5 V | - | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 24.8 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 86 W | 63 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | Polar | - | Polar |
Packaging | Tube | Tube | Reel |
Height | 4.83 mm | 4.83 mm | - |
Length | 9.65 mm | 10.41 mm | - |
Series | IXTA1R4N120 | IXTA1R4N100 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Type | Polar Power MOSFET | - | - |
Width | 10.41 mm | 9.65 mm | - |
Brand | IXYS | IXYS | IXYS |
Forward Transconductance Min | 0.8 S | - | - |
Fall Time | 29 ns | 28 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 27 ns | 35 ns | - |
Factory Pack Quantity | 50 | 50 | 800 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 78 ns | 65 ns | - |
Typical Turn On Delay Time | 25 ns | 25 ns | - |
Unit Weight | 0.081130 oz | 0.081130 oz | - |