PartNumber | IXTA3N100D2 | IXTA3N100D2HV | IXTA3N100D2-TRL |
Description | MOSFET N-CH MOSFETS (D2) 1000V 3A | MOSFET DISCMOSFET N-CH DEPL MODE-D2 | MOSFET IXTA3N100D2 TRL |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | - | Y |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-263-3 | TO-263HV-2 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 1 kV | 1 kV | - |
Id Continuous Drain Current | 3 A | 3 A | - |
Rds On Drain Source Resistance | 6 Ohms | 6 Ohms | - |
Configuration | Single | Single | - |
Packaging | Tube | Tube | Reel |
Series | IXTA3N100 | - | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | IXYS | IXYS | IXYS |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 50 | 50 | 800 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.056438 oz | - | - |
Vgs th Gate Source Threshold Voltage | - | 2.5 V | - |
Vgs Gate Source Voltage | - | 20 V | - |
Qg Gate Charge | - | 37.5 V | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 125 W | - |
Channel Mode | - | Depletion | - |
Fall Time | - | 40 ns | - |
Rise Time | - | 67 ns | - |
Typical Turn Off Delay Time | - | 34 ns | - |
Typical Turn On Delay Time | - | 27 ns | - |
Tradename | - | - | 0 |