IXTH0

IXTH02N250 vs IXTH02N450HV vs IXTH01N80

 
PartNumberIXTH02N250IXTH02N450HVIXTH01N80
DescriptionMOSFET High Voltage Power MOSFET; 2500V, 0.2AMOSFET DISCMOSFET NCH STD-VERYHIVOLT
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247-3TO-247HV-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage2.5 kV4.5 kV-
Id Continuous Drain Current200 mA200 mA-
Rds On Drain Source Resistance450 Ohms625 Ohms-
Vgs th Gate Source Threshold Voltage2.5 V4 V-
Vgs Gate Source Voltage10 V20 V-
Qg Gate Charge7.4 nC10.6 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation83 W113 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
Height21.46 mm--
Length16.26 mm--
SeriesIXTH02N250--
Transistor Type1 N-Channel1 N-Channel-
TypeHigh Voltage Power MOSFET--
Width5.3 mm--
BrandIXYSIXYS-
Forward Transconductance Min88 mS--
Fall Time33 ns143 ns-
Product TypeMOSFETMOSFET-
Rise Time19 ns48 ns-
Factory Pack Quantity3030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time32 ns28 ns-
Typical Turn On Delay Time19 ns17 ns-
Unit Weight0.229281 oz--
Manufacturer Part # Description RFQ
Littelfuse
Littelfuse
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