IXTH12N10

IXTH12N100L vs IXTH12N100 vs IXTH12N100A

 
PartNumberIXTH12N100LIXTH12N100IXTH12N100A
DescriptionMOSFET 12 Amps 1000V 1.3 Ohms RdsMOSFET 12 Amps 1000V 1.05 Rds
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247-3TO-247-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage1 kV1 kV-
Id Continuous Drain Current12 A12 A-
Rds On Drain Source Resistance1.3 Ohms1.05 Ohms-
Vgs Gate Source Voltage30 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation400 W300 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
Height21.46 mm21.46 mm-
Length16.26 mm16.26 mm-
SeriesIXTH12N100IXTH12N100-
Transistor Type1 N-Channel1 N-Channel-
Width5.3 mm5.3 mm-
BrandIXYSIXYS-
Fall Time65 ns32 ns-
Product TypeMOSFETMOSFET-
Rise Time55 ns33 ns-
Factory Pack Quantity3030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time110 ns62 ns-
Typical Turn On Delay Time30 ns21 ns-
Unit Weight0.229281 oz0.229281 oz-
Manufacturer Part # Description RFQ
Littelfuse
Littelfuse
IXTH12N100L MOSFET 12 Amps 1000V 1.3 Ohms Rds
IXTH12N100 MOSFET 12 Amps 1000V 1.05 Rds
IXTH12N100A New and Original
IXTH12N100L Darlington Transistors MOSFET 12 Amps 1000V 1.3 Ohms Rds
IXTH12N100 MOSFET 12 Amps 1000V 1.05 Rds
IXTH12N100Q MOSFET 12 Amps 1000V 1.05 Rds
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