PartNumber | IXTH1N200P3 | IXTH1N170DHV | IXTH1N100 |
Description | MOSFET 2000V/1A HV Power MOSFET, TO-247 | MOSFET DISC MOSFET N-CH DEPL MODE-STD | MOSFET 0.1 Amps 1000V 80 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | - | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247HV-3 | TO-247-3 |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 2 kV | 1.7 kV | 1 kV |
Id Continuous Drain Current | 1 A | 1 A | 1.5 A |
Rds On Drain Source Resistance | 40 Ohms | 16 Ohms | 11 Ohms |
Vgs th Gate Source Threshold Voltage | 2 V | 2.5 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 23.5 nC | 47 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 125 W | 290 W | 60 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Depletion | Enhancement |
Packaging | Tube | - | Tube |
Series | Polar3 | - | IXTH1N100 |
Brand | IXYS | IXYS | IXYS |
Forward Transconductance Min | 400 mS | - | - |
Fall Time | 80 ns | 216 ns | 18 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 26 ns | 38 ns | 19 ns |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 37 ns | 130 ns | 20 ns |
Typical Turn On Delay Time | 16 ns | 46 ns | 18 ns |
Unit Weight | 0.056438 oz | - | 0.229281 oz |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Height | - | - | 21.46 mm |
Length | - | - | 16.26 mm |
Width | - | - | 5.3 mm |