IXTH26

IXTH26P20P vs IXTH260N055T2 vs IXTH26N60P

 
PartNumberIXTH26P20PIXTH260N055T2IXTH26N60P
DescriptionMOSFET -26.0 Amps -200V 0.170 RdsMOSFET TRENCHT2 PWR MOSFET 55V 260AMOSFET 26.0 Amps 600 V 0.27 Ohm Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3TO-247-3
Number of Channels1 Channel-1 Channel
Transistor PolarityP-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage200 V55 V600 V
Id Continuous Drain Current26 A260 A26 A
Rds On Drain Source Resistance170 mOhms3.3 mOhms270 mOhms
Vgs Gate Source Voltage20 V-30 V
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 150 C
Pd Power Dissipation300 W-460 W
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
PackagingTubeTubeTube
Height21.46 mm-21.46 mm
Length16.26 mm-16.26 mm
SeriesIXTH26P20IXTH260N055IXTH26N60
Transistor Type1 P-Channel-1 N-Channel
Width5.3 mm-5.3 mm
BrandIXYSIXYSIXYS
Fall Time21 ns-21 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time33 ns-27 ns
Factory Pack Quantity303030
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time46 ns-75 ns
Typical Turn On Delay Time18 ns-25 ns
Unit Weight0.229281 oz0.229281 oz0.229281 oz
Tradename-HiPerFETPolarHV
Vgs th Gate Source Threshold Voltage--5 V
Qg Gate Charge--72 nC
Type--PolarHV Power MOSFET
Forward Transconductance Min--16 S
Manufacturer Part # Description RFQ
Littelfuse
Littelfuse
IXTH26P20P MOSFET -26.0 Amps -200V 0.170 Rds
IXTH260N055T2 MOSFET TRENCHT2 PWR MOSFET 55V 260A
IXTH26N60P MOSFET 26.0 Amps 600 V 0.27 Ohm Rds
IXTH26N60P MOSFET N-CH 600V 26A TO-247
IXTH26P20P MOSFET P-CH 200V 26A TO-247
IXTH260N055T2 MOSFET TRENCHT2 PWR MOSFET 55V 260A
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