IXTK20

IXTK200N10L2 vs IXTK200N10P vs IXTK20N140

 
PartNumberIXTK200N10L2IXTK200N10PIXTK20N140
DescriptionMOSFET L2 Linear Power MOSFETMOSFET 200 Amps 100V 0.0075 RdsMOSFET High Voltage Power MOSFET
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-264-3TO-264-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current200 A200 A-
Rds On Drain Source Resistance11 mOhms7.5 mOhms-
Vgs th Gate Source Threshold Voltage2 V5 V-
Vgs Gate Source Voltage10 V20 V-
Qg Gate Charge540 nC240 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 175 C-
Pd Power Dissipation1040 W800 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameLinear L2PolarHT-
PackagingTubeTube-
Height26.16 mm26.16 mm-
Length19.96 mm19.96 mm-
SeriesIXTK200N10IXTK200N10-
Transistor Type1 N-Channel1 N-Channel-
TypeLinear L2 Power MOSFETPolarHT Power MOSFET-
Width5.13 mm5.13 mm-
BrandIXYSIXYS-
Forward Transconductance Min55 S60 S-
Fall Time27 ns90 ns-
Product TypeMOSFETMOSFET-
Rise Time225 ns35 ns-
Factory Pack Quantity2525-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time127 ns150 ns-
Typical Turn On Delay Time40 ns30 ns-
Unit Weight0.264555 oz0.352740 oz-
RoHS-Y-
Manufacturer Part # Description RFQ
Littelfuse
Littelfuse
IXTK200N10L2 MOSFET L2 Linear Power MOSFET
IXTK200N10P MOSFET 200 Amps 100V 0.0075 Rds
IXTK20N150 MOSFET 1200V High Voltage Power MOSFET
IXTK200N10L2 MOSFET N-CH 100V 200A TO-264
IXTK20N150 MOSFET N-CH 1500V 20A TO-264
IXTK20N140 MOSFET High Voltage Power MOSFET
IXTK200N10P MOSFET 200 Amps 100V 0.0075 Rds
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