IXTK9

IXTK90P20P vs IXTK90N25L2 vs IXTK90N15

 
PartNumberIXTK90P20PIXTK90N25L2IXTK90N15
DescriptionMOSFET -90.0 Amps -200V 0.044 RdsMOSFET 90 Amps 250VMOSFET 90 Amps 150V 0.016 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-264-3TO-264-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityP-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage200 V250 V-
Id Continuous Drain Current90 A90 A-
Rds On Drain Source Resistance44 mOhms33 mOhms-
Vgs Gate Source Voltage20 V10 V-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation890 W960 W-
ConfigurationSingleSingleSingle
PackagingTubeTubeTube
SeriesIXTK90P20IXTK90N25IXTK90N15
Transistor Type1 P-Channel1 N-Channel1 N-Channel
BrandIXYSIXYS-
Product TypeMOSFETMOSFET-
Factory Pack Quantity2525-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.352740 oz0.264555 oz0.352740 oz
Vgs th Gate Source Threshold Voltage-2 V-
Qg Gate Charge-640 nC-
Channel Mode-EnhancementEnhancement
Tradename-LinearL2-
Height-26.59 mm-
Length-20.29 mm-
Type-LinearL2 Power MOSFET-
Width-5.31 mm-
Forward Transconductance Min-35 S-
Fall Time-160 ns17 ns
Rise Time-175 ns30 ns
Typical Turn Off Delay Time-40 ns115 ns
Typical Turn On Delay Time-50 ns28 ns
Package Case--TO-264-3
Pd Power Dissipation--390 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--90 A
Vds Drain Source Breakdown Voltage--150 V
Rds On Drain Source Resistance--16 mOhms
Manufacturer Part # Description RFQ
Littelfuse
Littelfuse
IXTK90P20P MOSFET -90.0 Amps -200V 0.044 Rds
IXTK90N25L2 MOSFET 90 Amps 250V
IXTK90N25L2 MOSFET N-CH 250V 90A TO-264
IXTK90P20P Darlington Transistors MOSFET -90.0 Amps -200V 0.044 Rds
IXTK90N15 MOSFET 90 Amps 150V 0.016 Rds
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