PartNumber | IXTK90P20P | IXTK90N25L2 | IXTK90N15 |
Description | MOSFET -90.0 Amps -200V 0.044 Rds | MOSFET 90 Amps 250V | MOSFET 90 Amps 150V 0.016 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-264-3 | TO-264-3 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | P-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 200 V | 250 V | - |
Id Continuous Drain Current | 90 A | 90 A | - |
Rds On Drain Source Resistance | 44 mOhms | 33 mOhms | - |
Vgs Gate Source Voltage | 20 V | 10 V | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 890 W | 960 W | - |
Configuration | Single | Single | Single |
Packaging | Tube | Tube | Tube |
Series | IXTK90P20 | IXTK90N25 | IXTK90N15 |
Transistor Type | 1 P-Channel | 1 N-Channel | 1 N-Channel |
Brand | IXYS | IXYS | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 25 | 25 | - |
Subcategory | MOSFETs | MOSFETs | - |
Unit Weight | 0.352740 oz | 0.264555 oz | 0.352740 oz |
Vgs th Gate Source Threshold Voltage | - | 2 V | - |
Qg Gate Charge | - | 640 nC | - |
Channel Mode | - | Enhancement | Enhancement |
Tradename | - | LinearL2 | - |
Height | - | 26.59 mm | - |
Length | - | 20.29 mm | - |
Type | - | LinearL2 Power MOSFET | - |
Width | - | 5.31 mm | - |
Forward Transconductance Min | - | 35 S | - |
Fall Time | - | 160 ns | 17 ns |
Rise Time | - | 175 ns | 30 ns |
Typical Turn Off Delay Time | - | 40 ns | 115 ns |
Typical Turn On Delay Time | - | 50 ns | 28 ns |
Package Case | - | - | TO-264-3 |
Pd Power Dissipation | - | - | 390 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 90 A |
Vds Drain Source Breakdown Voltage | - | - | 150 V |
Rds On Drain Source Resistance | - | - | 16 mOhms |