PartNumber | IXTP1N120P | IXTP1N100P | IXTP1N100 |
Description | MOSFET 1 Amps 1200V 20 Rds | MOSFET 1 Amps 1000V 14 Rds | MOSFET 1.5 Amps 1000V 11 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 1.2 kV | 1 kV | 1 kV |
Id Continuous Drain Current | 1 A | 1.2 A | 1.5 A |
Rds On Drain Source Resistance | 20 Ohms | 13 Ohms | 11 Ohms |
Vgs Gate Source Voltage | 20 V | 20 V | 30 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 63 W | 50 W | 54 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Tube | Tube |
Height | 9.15 mm | 9.15 mm | 9.15 mm |
Length | 10.66 mm | 10.66 mm | 10.66 mm |
Series | IXTP1N120 | IXTP1N100 | IXTP1N100 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 4.82 mm | 4.83 mm | 4.82 mm |
Brand | IXYS | IXYS | IXYS |
Fall Time | 27 ns | 24 ns | 18 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 28 ns | 26 ns | 19 ns |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 54 ns | 55 ns | 20 ns |
Typical Turn On Delay Time | 20 ns | 20 ns | 18 ns |
Unit Weight | 0.081130 oz | 0.081130 oz | 0.012346 oz |