 |  | | |
| PartNumber | IXTP1R4N100P | IXTP1R4N60P | IXTP1R4N120P |
| Description | MOSFET 1.4 Amps 1000V 11 Rds | IGBT Transistors MOSFET 1.4 Amps 600 V 8 Ohm Rds | MOSFET 1.4 Amps 1200V 15 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 1 kV | - | - |
| Id Continuous Drain Current | 1.4 A | - | - |
| Rds On Drain Source Resistance | 11 Ohms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 63 W | - | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Tube | Tube |
| Height | 9.15 mm | - | - |
| Length | 10.66 mm | - | - |
| Series | IXTP1R4N100 | IXTP1R4N60 | IXTP1R4N120 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 4.83 mm | - | - |
| Brand | IXYS | - | - |
| Fall Time | 28 ns | 16 ns | 29 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 35 ns | 16 ns | 27 ns |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 65 ns | 25 ns | 78 ns |
| Typical Turn On Delay Time | 25 ns | 10 ns | 25 ns |
| Unit Weight | 0.081130 oz | 0.081130 oz | 0.081130 oz |
| Tradename | - | PolarHV | - |
| Package Case | - | TO-220-3 | TO-220-3 |
| Pd Power Dissipation | - | 50 W | 86 W |
| Vgs Gate Source Voltage | - | 30 V | 20 V |
| Id Continuous Drain Current | - | 1.4 A | 1.4 A |
| Vds Drain Source Breakdown Voltage | - | 600 V | 1200 V |
| Vgs th Gate Source Threshold Voltage | - | 5.5 V | - |
| Rds On Drain Source Resistance | - | 9 Ohms | 13 Ohms |
| Qg Gate Charge | - | 5.2 nC | - |
| Forward Transconductance Min | - | 0.7 S | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Littelfuse |
IXTP1R4N100P | MOSFET 1.4 Amps 1000V 11 Rds | |
| IXTP1R6N100D2 | MOSFET N-CH MOSFETS (D2) 1000V 1.6A | ||
| IXTP1R6N50D2 | MOSFET N-CH MOSFETS (D2) 500V 1.6A | ||
| IXTP1R6N50D2 | MOSFET N-CH MOSFETS (D2) 500V 1.6A | ||
| IXTP1R4N100P | IGBT Transistors MOSFET 1.4 Amps 1000V 11 Rds | ||
| IXTP1R6N100D2 | IGBT Transistors MOSFET N-CH MOSFETS (D2) 1000V 1.6A | ||
| IXTP1R4N60P | IGBT Transistors MOSFET 1.4 Amps 600 V 8 Ohm Rds | ||
| IXTP1R6N50P | IGBT Transistors MOSFET 1.6 Amps 500 V 6 Ohm Rds | ||
| IXTP1R4N120P | MOSFET 1.4 Amps 1200V 15 Rds |