IXTP2

IXTP2R4N120P vs IXTP2N95A vs IXTP2N80P

 
PartNumberIXTP2R4N120PIXTP2N95AIXTP2N80P
DescriptionMOSFET 2.4 Amps 1200V 7.5 RdsMOSFET 2 Amps 800V 6 Rds
ManufacturerIXYS-IXYS
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-220-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage1.2 kV--
Id Continuous Drain Current2.4 A--
Rds On Drain Source Resistance7.5 Ohms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation125 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
PackagingTube-Tube
Height9.15 mm--
Length10.66 mm--
SeriesIXTP2R4N120-IXTP2N80
Transistor Type1 N-Channel-1 N-Channel
Width4.83 mm--
BrandIXYS--
Fall Time32 ns-28 ns
Product TypeMOSFET--
Rise Time25 ns-35 ns
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time70 ns-53 ns
Typical Turn On Delay Time22 ns-25 ns
Unit Weight0.081130 oz-0.081130 oz
Package Case--TO-220-3
Pd Power Dissipation--70 W
Vgs Gate Source Voltage--30 V
Id Continuous Drain Current--2 A
Vds Drain Source Breakdown Voltage--800 V
Rds On Drain Source Resistance--6 Ohms
Manufacturer Part # Description RFQ
Littelfuse
Littelfuse
IXTP2R4N120P MOSFET 2.4 Amps 1200V 7.5 Rds
IXTP2R4N120P MOSFET 2.4 Amps 1200V 7.5 Rds
IXTP2N95A New and Original
IXTP2R4N50P IGBT Transistors MOSFET 2.4 Amps 500 V 3.5 Ohm Rds
IXTP2N80P MOSFET 2 Amps 800V 6 Rds
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