PartNumber | IXTP20N65X2 | IXTP20N65X | IXTP200N055T2 |
Description | Discrete Semiconductor Modules DiscMSFT NChUltraJnctX2Class TO-220AB/FP | MOSFET 650V/9A Power MOSFET | MOSFET 200 Amps 55V 0.0042 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | Discrete Semiconductor Modules | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Product | Power MOSFET Modules | - | - |
Type | X2-Class | - | - |
Vgs Gate Source Voltage | 30 V | 30 V | 20 V |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 175 C |
Packaging | Tube | Tube | Tube |
Configuration | Single | Single | Single |
Brand | IXYS | IXYS | IXYS |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Fall Time | 20 ns | 22 ns | 27 ns |
Id Continuous Drain Current | 20 A | 20 A | 200 A |
Pd Power Dissipation | 290 W | 320 W | 360 W |
Product Type | Discrete Semiconductor Modules | MOSFET | MOSFET |
Rds On Drain Source Resistance | 185 mOhms | 210 mOhms | 4.2 mOhms |
Rise Time | 27 ns | 30 ns | 22 ns |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | Discrete Semiconductor Modules | MOSFETs | MOSFETs |
Tradename | HiPerFET | HiPerFET | HiPerFET |
Typical Turn Off Delay Time | 47 ns | 46 ns | 49 ns |
Typical Turn On Delay Time | 19 ns | 18 ns | 26 ns |
Vds Drain Source Breakdown Voltage | 650 V | 650 V | 55 V |
Vgs th Gate Source Threshold Voltage | 2.5 V | 3 V | - |
Technology | - | Si | Si |
Number of Channels | - | 1 Channel | 1 Channel |
Qg Gate Charge | - | 35 nC | - |
Channel Mode | - | Enhancement | Enhancement |
Series | - | X-Class | IXTP200N055 |
Forward Transconductance Min | - | 9 S | - |
Unit Weight | - | 0.012346 oz | 0.081130 oz |
Height | - | - | 9.15 mm |
Length | - | - | 10.66 mm |
Transistor Type | - | - | 1 N-Channel |
Width | - | - | 4.83 mm |