 | |  | |
| PartNumber | IXTP26P20P | IXTP260N055T2 | IXTP26P10T |
| Description | MOSFET -26.0 Amps -200V 0.170 Rds | MOSFET TRENCHT2 PWR MOSFET 55V 260A | MOSFET MOSFET P-CH 200V 26A TO-220 |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220AB-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | P-Channel | N-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 200 V | 55 V | - |
| Id Continuous Drain Current | 26 A | 260 A | - |
| Rds On Drain Source Resistance | 170 mOhms | 3.3 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 4 V | - |
| Vgs Gate Source Voltage | 10 V | 20 V | - |
| Qg Gate Charge | 56 nC | 140 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 175 C | + 150 C |
| Pd Power Dissipation | 300 W | 480 W | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Tube | Tube |
| Height | 9.15 mm | 16 mm | - |
| Length | 10.66 mm | 10.66 mm | - |
| Series | IXTP26P20 | IXTP260N055 | IXTP26P10 |
| Transistor Type | 1 P-Channel | - | 1 P-Channel |
| Width | 4.83 mm | 4.83 mm | - |
| Brand | IXYS | IXYS | - |
| Forward Transconductance Min | 10 S | 55 S | - |
| Fall Time | 21 ns | 24 ns | 1 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 33 ns | 27 ns | 15 ns |
| Factory Pack Quantity | 50 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 46 ns | 36 ns | 37 ns |
| Typical Turn On Delay Time | 18 ns | 20 ns | 20 ns |
| Unit Weight | 0.081130 oz | 0.081130 oz | 0.012346 oz |
| Tradename | - | HiPerFET | - |
| Type | - | TrenchT2 Power MOSFET | - |
| Package Case | - | - | TO-220-3 |
| Pd Power Dissipation | - | - | 150 W |
| Vgs Gate Source Voltage | - | - | 15 V |
| Id Continuous Drain Current | - | - | - 26 A |
| Vds Drain Source Breakdown Voltage | - | - | - 100 V |
| Vgs th Gate Source Threshold Voltage | - | - | - 4.5 V |
| Rds On Drain Source Resistance | - | - | 90 mOhms |
| Qg Gate Charge | - | - | 52 nC |
| Forward Transconductance Min | - | - | 17 S |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Littelfuse |
IXTP26P20P | MOSFET -26.0 Amps -200V 0.170 Rds | |
| IXTP260N055T2 | MOSFET TRENCHT2 PWR MOSFET 55V 260A | ||
| IXTP26P20P | Darlington Transistors MOSFET -26.0 Amps -200V 0.170 Rds | ||
| IXTP26P10T | MOSFET MOSFET P-CH 200V 26A TO-220 | ||
| IXTP260N055T2 | IGBT Transistors MOSFET TRENCHT2 PWR MOSFET 55V 260A |