| PartNumber | IXTP32N65X | IXTP32N65XM | IXTP32N20T |
| Description | MOSFET 650V/9A Power MOSFET | MOSFET 650V/9A Power MOSFET | MOSFET 32 Amps 200V 78 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | 200 V |
| Id Continuous Drain Current | 32 A | 14 A | 32 A |
| Rds On Drain Source Resistance | 135 mOhms | 135 mOhms | 78 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | - |
| Vgs Gate Source Voltage | 30 V | 30 V | 20 V |
| Qg Gate Charge | 54 nC | 54 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 175 C |
| Pd Power Dissipation | 500 W | 78 W | 200 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | HiPerFET | HiPerFET | HiPerFET |
| Packaging | Tube | Tube | Tube |
| Series | X-Class | - | IXTP32N20 |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 13 S | 13 S | - |
| Fall Time | 28 ns | 28 ns | 31 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 49 ns | 49 ns | 18 ns |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 58 ns | 58 ns | 55 ns |
| Typical Turn On Delay Time | 23 ns | 23 ns | 14 ns |
| Unit Weight | 0.012346 oz | 0.012346 oz | 0.081130 oz |
| Height | - | - | 9.15 mm |
| Length | - | - | 10.66 mm |
| Transistor Type | - | - | 1 N-Channel |
| Width | - | - | 4.83 mm |