PartNumber | IXTP3N120 | IXTP3N100P | IXTP3N100D2 |
Description | MOSFET MOSFET Id3 BVdass1200 | MOSFET 3 Amps 1000V 4.8 Rds | MOSFET N-CH MOSFETS (D2) 1000V 3A |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220AB-3 | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 1.2 kV | 1 kV | 1 kV |
Id Continuous Drain Current | 3 A | 3 A | 3 A |
Rds On Drain Source Resistance | 4.5 Ohms | 4.8 Ohms | 6 Ohms |
Vgs th Gate Source Threshold Voltage | 2.5 V | 4.8 V | - |
Vgs Gate Source Voltage | 10 V | 20 V | - |
Qg Gate Charge | 42 nC | 39 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 200 W | 125 W | - |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Tube | Tube | Tube |
Height | 9.15 mm | 16 mm | - |
Length | 10.66 mm | 10.66 mm | - |
Series | IXTP3N120 | IXTP3N100 | IXTP3N100 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 4.83 mm | 4.83 mm | - |
Brand | IXYS | IXYS | IXYS |
Forward Transconductance Min | 1.5 S | 1.5 S | - |
Fall Time | 18 ns | 29 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 15 ns | 27 ns | - |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 32 ns | 75 ns | - |
Typical Turn On Delay Time | 17 ns | 22 ns | - |
Unit Weight | 0.081130 oz | 0.081130 oz | 0.081130 oz |
Tradename | - | Polar | - |
Type | - | Polar Power MOSFET | - |