| PartNumber | IXTP3N120 | IXTP3N100P | IXTP3N100D2 |
| Description | MOSFET MOSFET Id3 BVdass1200 | MOSFET 3 Amps 1000V 4.8 Rds | MOSFET N-CH MOSFETS (D2) 1000V 3A |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220AB-3 | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 1.2 kV | 1 kV | 1 kV |
| Id Continuous Drain Current | 3 A | 3 A | 3 A |
| Rds On Drain Source Resistance | 4.5 Ohms | 4.8 Ohms | 6 Ohms |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 4.8 V | - |
| Vgs Gate Source Voltage | 10 V | 20 V | - |
| Qg Gate Charge | 42 nC | 39 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 200 W | 125 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Tube | Tube |
| Height | 9.15 mm | 16 mm | - |
| Length | 10.66 mm | 10.66 mm | - |
| Series | IXTP3N120 | IXTP3N100 | IXTP3N100 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 4.83 mm | 4.83 mm | - |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 1.5 S | 1.5 S | - |
| Fall Time | 18 ns | 29 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 15 ns | 27 ns | - |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 32 ns | 75 ns | - |
| Typical Turn On Delay Time | 17 ns | 22 ns | - |
| Unit Weight | 0.081130 oz | 0.081130 oz | 0.081130 oz |
| Tradename | - | Polar | - |
| Type | - | Polar Power MOSFET | - |