PartNumber | IXTP60N20T | IXTP60N10T | IXTP62N15P |
Description | MOSFET Trench POWER MOSFETs 200v, 60A | MOSFET MOSFET Id60 BVdass100 | MOSFET 62 Amps 150V 0.04 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220AB-3 | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 200 V | 100 V | 150 V |
Id Continuous Drain Current | 60 A | 60 A | 62 A |
Rds On Drain Source Resistance | 40 mOhms | 18 mOhms | 40 mOhms |
Vgs th Gate Source Threshold Voltage | 3 V | - | - |
Vgs Gate Source Voltage | 10 V | - | 20 V |
Qg Gate Charge | 73 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 500 W | 176 W | 350 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | HiPerFET | HiPerFET | - |
Packaging | Tube | Tube | Tube |
Series | IXTP60N20 | IXTP60N10 | IXTP62N15 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | IXYS | IXYS | IXYS |
Forward Transconductance Min | 40 S | 42 S | - |
Fall Time | 13 ns | 37 ns | 35 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 13 ns | 40 ns | 38 ns |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 33 ns | 43 ns | 76 ns |
Typical Turn On Delay Time | 22 ns | 27 ns | 27 ns |
Unit Weight | 0.012346 oz | 0.081130 oz | 0.081130 oz |
Height | - | 9.15 mm | 9.15 mm |
Length | - | 10.66 mm | 10.66 mm |
Width | - | 4.82 mm | 4.83 mm |