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| PartNumber | IXTP7N45 | IXTP7N50 | IXTP7N60P |
| Description | IGBT Transistors MOSFET 1.1 Ohms Rds | ||
| Manufacturer | - | - | IXYS |
| Product Category | - | - | Transistors - FETs, MOSFETs - Single |
| Series | - | - | IXTP7N60 |
| Packaging | - | - | Tube |
| Unit Weight | - | - | 0.081130 oz |
| Mounting Style | - | - | Through Hole |
| Tradename | - | - | PolarHV |
| Package Case | - | - | TO-220-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 150 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 26 ns |
| Rise Time | - | - | 27 ns |
| Vgs Gate Source Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 7 A |
| Vds Drain Source Breakdown Voltage | - | - | 600 V |
| Vgs th Gate Source Threshold Voltage | - | - | 5.5 V |
| Rds On Drain Source Resistance | - | - | 1.1 Ohms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 65 ns |
| Typical Turn On Delay Time | - | - | 20 ns |
| Qg Gate Charge | - | - | 20 nC |
| Forward Transconductance Min | - | - | 4 S |
| Channel Mode | - | - | Enhancement |