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| PartNumber | IXTP80N10T | IXTP80N10 | IXTP80N10T 80N10 IXYS |
| Description | MOSFET 80 Amps 100V 13.0 Rds | ||
| Manufacturer | IXYS | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 80 A | - | - |
| Rds On Drain Source Resistance | 14 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 230 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | HiPerFET | - | - |
| Packaging | Tube | - | - |
| Height | 9.15 mm | - | - |
| Length | 10.66 mm | - | - |
| Series | IXTP80N10 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.83 mm | - | - |
| Brand | IXYS | - | - |
| Fall Time | 48 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 54 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 40 ns | - | - |
| Typical Turn On Delay Time | 31 ns | - | - |
| Unit Weight | 0.081130 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Littelfuse |
IXTP80N12T2 | Discrete Semiconductor Modules DiscMSFT NChTrenchGate-Gen2 TO-220AB/FP | |
| IXTP80N10T | MOSFET 80 Amps 100V 13.0 Rds | ||
| IXTP80N10 | New and Original | ||
| IXTP80N10T 80N10 IXYS | New and Original | ||
| IXTP80N12T2 | New and Original | ||
| IXTP80N10T | Darlington Transistors MOSFET 80 Amps 100V 13.0 Rds |