IXTQ52 stock, IXTQ52, IXTQ52P10P


PartNumber	IXTQ52P10P	IXTQ52N30P	IXTQ52N30P/FDA59N30
Description	MOSFET -52.0 Amps -100V 0.050 Rds	MOSFET 52 Amps 300V 0.066 Ohm Rds
Manufacturer	IXYS	IXYS	-
Product Category	MOSFET	MOSFET	-
RoHS	Y	Y	-
Technology	Si	Si	-
Mounting Style	Through Hole	Through Hole	-
Package / Case	TO-3P-3	TO-3P-3	-
Number of Channels	1 Channel	1 Channel	-
Transistor Polarity	P-Channel	N-Channel	-
Vds Drain Source Breakdown Voltage	100 V	300 V	-
Id Continuous Drain Current	52 A	52 A	-
Rds On Drain Source Resistance	50 mOhms	66 mOhms	-
Vgs th Gate Source Threshold Voltage	4 V	-	-
Vgs Gate Source Voltage	20 V	20 V	-
Qg Gate Charge	60 nC	-	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Pd Power Dissipation	300 W	400 W	-
Configuration	Single	Single	-
Channel Mode	Enhancement	Enhancement	-
Tradename	PolarP	-	-
Packaging	Tube	Tube	-
Height	20.1 mm	20.3 mm	-
Length	15.8 mm	15.8 mm	-
Series	IXTQ52P10	IXTQ52N30	-
Transistor Type	1 P-Channel	1 N-Channel	-
Type	PolarP Power MOSFET	-	-
Width	4.9 mm	4.9 mm	-
Brand	IXYS	IXYS	-
Forward Transconductance Min	12 S	-	-
Fall Time	22 ns	20 ns	-
Product Type	MOSFET	MOSFET	-
Rise Time	29 ns	22 ns	-
Factory Pack Quantity	30	30	-
Subcategory	MOSFETs	MOSFETs	-
Typical Turn Off Delay Time	38 ns	60 ns	-
Typical Turn On Delay Time	22 ns	24 ns	-
Unit Weight	0.194007 oz	0.194007 oz	-

Search Part Number : "IXTQ52", Match & Start with "IXTQ52" - Total : 5

Manufacturer	Part #	Description
Littelfuse	IXTQ52P10P	MOSFET -52.0 Amps -100V 0.050 Rds
Littelfuse	IXTQ52N30P	MOSFET 52 Amps 300V 0.066 Ohm Rds
	IXTQ52N30P/FDA59N30	New and Original
	IXTQ52P10P	IGBT Transistors MOSFET -52.0 Amps -100V 0.050 Rds
	IXTQ52N30P	IGBT Transistors MOSFET 52 Amps 300V 0.066 Ohm Rds

IXTQ52