PartNumber | IXTQ60N20T | IXTQ60N10T | IXTQ60N20L2 |
Description | Discrete Semiconductor Modules DiscMSFT NChTrenchGate-Gen1 TO-3P (3) | Discrete Semiconductor Modules DiscMSFT NChTrenchGate-Gen1 TO-3P (3) | MOSFET LINEAR L2 SERIES MOSFET 200V 60A |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | Discrete Semiconductor Modules | Discrete Semiconductor Modules | MOSFET |
RoHS | Y | Y | Y |
Product | Power MOSFET Modules | Power MOSFET Modules | - |
Type | Trench | Trench | - |
Vgs Gate Source Voltage | 20 V | 30 V | - |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-3P | TO-3P | TO-3P-3 |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 150 C |
Packaging | Tube | Tube | Tube |
Configuration | Single | Single | Single |
Brand | IXYS | IXYS | IXYS |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Fall Time | 22 ns | 37 ns | - |
Id Continuous Drain Current | 60 A | 60 A | 60 A |
Pd Power Dissipation | 500 W | 176 W | 540 W |
Product Type | Discrete Semiconductor Modules | Discrete Semiconductor Modules | MOSFET |
Rds On Drain Source Resistance | 40 mOhms | 18 mOhms | 45 mOhms |
Rise Time | 13 ns | 40 ns | - |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | Discrete Semiconductor Modules | Discrete Semiconductor Modules | MOSFETs |
Tradename | Trench | Trench | - |
Typical Turn Off Delay Time | 33 ns | 43 ns | 90 ns |
Typical Turn On Delay Time | 22 ns | 27 ns | 26 ns |
Vds Drain Source Breakdown Voltage | 200 V | 100 V | 200 V |
Vgs th Gate Source Threshold Voltage | 3 V | 2.5 V | - |
Technology | - | - | Si |
Number of Channels | - | - | 1 Channel |
Channel Mode | - | - | Enhancement |
Series | - | - | IXTQ60N20 |
Transistor Type | - | - | 1 N-Channel |
Unit Weight | - | - | 0.194007 oz |