IXTQ69N30PM

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-3P-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

300 V

Id - Continuous Drain Current:

25 A

Rds On - Drain-Source Resistance:

49 mOhms

Vgs th - Gate-Source Threshold Voltage:

2.5 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

156 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

90 W

Configuration:

Single

Channel Mode:

Enhancement

Transistor Type:

1 N-Channel

Brand:

IXYS

Fall Time:

27 ns

Product Type:

MOSFET

Rise Time:

25 ns

Factory Pack Quantity:

30

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

75 ns

Typical Turn-On Delay Time:

25 ns

Tags

IXTQ6, IXTQ, IXT