IXTT5

IXTT500N04T2 vs IXTT50P085 vs IXTT50N30

 
PartNumberIXTT500N04T2IXTT50P085IXTT50N30
DescriptionMOSFET Trench T2 Power MOSFETMOSFET P-CH 85V 50A TO-268MOSFET 50 Amps 300V 0.065 Rds
ManufacturerIXYS-IXYS
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-268-3--
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current500 A--
Rds On Drain Source Resistance1.6 mOhms--
Vgs th Gate Source Threshold Voltage3.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge405 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 150 C
Pd Power Dissipation1 kW--
Channel ModeEnhancement-Enhancement
TradenameHiPerFET--
PackagingTube-Tube
Height5.1 mm--
Length14 mm--
SeriesIXTT500N04-IXTT50N30
TypeTrenchT2 Power MOSFET--
Width16.05 mm--
BrandIXYS--
Forward Transconductance Min75 S--
Fall Time44 ns-17 ns
Product TypeMOSFET--
Rise Time16 ns-33 ns
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time68 ns-70 ns
Typical Turn On Delay Time37 ns-24 ns
Unit Weight0.229281 oz-0.158733 oz
Package Case--TO-268-3
Number of Channels--1 Channel
Configuration--Single
Transistor Type--1 N-Channel
Pd Power Dissipation--400 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--50 A
Vds Drain Source Breakdown Voltage--300 V
Rds On Drain Source Resistance--65 mOhms
Manufacturer Part # Description RFQ
Littelfuse
Littelfuse
IXTT50P10 MOSFET -50 Amps -100V 0.055 Rds
IXTT500N04T2 MOSFET Trench T2 Power MOSFET
IXTT50P085 MOSFET P-CH 85V 50A TO-268
IXTT50N30 MOSFET 50 Amps 300V 0.065 Rds
IXTT500N04T2 MOSFET Trench T2 Power MOSFET
IXTT50P10 MOSFET -50 Amps -100V 0.055 Rds
IXTT52N30P MOSFET 52 Amps 300V 0.066 Rds
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