| PartNumber | IXTT90P10P | IXTT96N20P | IXTT96N15P |
| Description | MOSFET -90.0 Amps -100V 0.250 Rds | MOSFET 96 Amps 200V 0.024 Rds | MOSFET 96 Amps 150V 0.024 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-268-3 | TO-268-3 | TO-268-3 |
| Transistor Polarity | P-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 200 V | 150 V |
| Id Continuous Drain Current | 90 A | 96 A | 96 A |
| Rds On Drain Source Resistance | 25 mOhms | 24 mOhms | 24 mOhms |
| Packaging | Tube | Tube | Tube |
| Series | IXTT90P10 | IXTT96N20 | IXTT96N15 |
| Brand | IXYS | IXYS | IXYS |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.158733 oz | 0.158733 oz | 0.158733 oz |
| Number of Channels | - | 1 Channel | 1 Channel |
| Vgs th Gate Source Threshold Voltage | - | 5 V | - |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Qg Gate Charge | - | 145 nC | - |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 175 C | + 175 C |
| Pd Power Dissipation | - | 600 W | 480 W |
| Configuration | - | Single | Single |
| Channel Mode | - | Enhancement | Enhancement |
| Tradename | - | PolarHT | - |
| Height | - | 5.1 mm | 5.1 mm |
| Length | - | 14 mm | 16.05 mm |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Type | - | PolarHT Power MOSFET | - |
| Width | - | 16.05 mm | 14 mm |
| Forward Transconductance Min | - | 40 S | - |
| Fall Time | - | 30 ns | 18 ns |
| Rise Time | - | 30 ns | 33 ns |
| Typical Turn Off Delay Time | - | 75 ns | 66 ns |
| Typical Turn On Delay Time | - | 28 ns | 30 ns |