PartNumber | IXTY4N65X2-TRL | IXTY64N055T-TRL | IXTY4N65X2 |
Description | Discrete Semiconductor Modules X2-Class Power MOSFET | Discrete Semiconductor Modules IXTY64N055T TRL | MOSFET DISCMSFT NCHULTRAJNCTN X2CLASS |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | Discrete Semiconductor Modules | Discrete Semiconductor Modules | MOSFET |
RoHS | Y | Y | Y |
Product | Power MOSFET Modules | Power MOSFET Modules | - |
Type | X2-Class | TrenchMV | - |
Vgs Gate Source Voltage | 30 V | 20 V | 30 V |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 175 C | + 150 C |
Series | X2-Class | - | X2-Class |
Packaging | Reel | Reel | Tube |
Configuration | Single | Single | Single |
Brand | IXYS | IXYS | IXYS |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Fall Time | 25 ns | 30 ns | 25 ns |
Id Continuous Drain Current | 4 A | 64 A | 4 A |
Pd Power Dissipation | 80 W | 130 W | 80 W |
Product Type | Discrete Semiconductor Modules | Discrete Semiconductor Modules | MOSFET |
Rds On Drain Source Resistance | 850 mOhms | 13 mOhms | 850 mOhms |
Rise Time | 28 ns | 52 ns | 28 ns |
Factory Pack Quantity | 2500 | 2500 | 70 |
Subcategory | Discrete Semiconductor Modules | Discrete Semiconductor Modules | MOSFETs |
Typical Turn Off Delay Time | 57 ns | 37 ns | 57 ns |
Typical Turn On Delay Time | 22 ns | 19 ns | 22 ns |
Vds Drain Source Breakdown Voltage | 650 V | 55 V | 650 V |
Vgs th Gate Source Threshold Voltage | 3 V | 2 V | 3 V |
Technology | - | - | Si |
Qg Gate Charge | - | - | 8.3 nC |
Channel Mode | - | - | Enhancement |
Tradename | - | - | HiPerFET |
Forward Transconductance Min | - | - | 2.5 S |
Unit Weight | - | - | 0.081130 oz |