PartNumber | IXTY01N100-TRL | IXTY01N100D-TRL | IXTY01N100 |
Description | Discrete Semiconductor Modules High Voltage Power MOSFET | Discrete Semiconductor Modules High Voltage Power MOSFET | MOSFET 0.1 Amps 1000V 80 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | Discrete Semiconductor Modules | Discrete Semiconductor Modules | MOSFET |
RoHS | Y | Y | Y |
Product | Power MOSFET Modules | Power MOSFET Modules | - |
Type | High Voltage | High Voltage | - |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Packaging | Reel | Reel | Tube |
Configuration | Single | Single | Single |
Brand | IXYS | IXYS | IXYS |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Fall Time | 28 ns | 64 ns | 28 ns |
Id Continuous Drain Current | 100 mA | 400 mA | 100 mA |
Pd Power Dissipation | 25 W | 25 W | 25 W |
Product Type | Discrete Semiconductor Modules | Discrete Semiconductor Modules | MOSFET |
Rds On Drain Source Resistance | 80 Ohms | 80 Ohms | 80 Ohms |
Rise Time | 12 ns | 10 ns | 12 ns |
Factory Pack Quantity | 2500 | 2500 | 70 |
Subcategory | Discrete Semiconductor Modules | Discrete Semiconductor Modules | MOSFETs |
Typical Turn Off Delay Time | 40 ns | 34 ns | 28 ns |
Typical Turn On Delay Time | 12 ns | 7 ns | 12 ns |
Vds Drain Source Breakdown Voltage | 1000 V | 1000 V | 1 kV |
Vgs th Gate Source Threshold Voltage | 2 V | - 4.5 V | - |
Technology | - | - | Si |
Number of Channels | - | - | 1 Channel |
Channel Mode | - | - | Enhancement |
Height | - | - | 2.38 mm |
Length | - | - | 6.73 mm |
Series | - | - | IXTY01N100 |
Transistor Type | - | - | 1 N-Channel |
Width | - | - | 6.22 mm |
Forward Transconductance Min | - | - | 160 mS |
Unit Weight | - | - | 0.012346 oz |