IXTY1R4N1

IXTY1R4N120P-TRL vs IXTY1R4N100P vs IXTY1R4N120P

 
PartNumberIXTY1R4N120P-TRLIXTY1R4N100PIXTY1R4N120P
DescriptionDiscrete Semiconductor Modules Polar Power MOSFETMOSFET 1.4 Amps 1000V 11 RdsMOSFET N-CH 1200V 1.4A TO-252
ManufacturerIXYSIXYS-
Product CategoryDiscrete Semiconductor ModulesMOSFET-
RoHSYY-
ProductPower MOSFET Modules--
TypePolar--
Vgs Gate Source Voltage30 V20 V-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
PackagingReelTube-
ConfigurationSingleSingle-
BrandIXYSIXYS-
Transistor PolarityN-ChannelN-Channel-
Fall Time29 ns28 ns-
Id Continuous Drain Current1.4 A1.4 A-
Pd Power Dissipation86 W63 W-
Product TypeDiscrete Semiconductor ModulesMOSFET-
Rds On Drain Source Resistance13 Ohms11 Ohms-
Rise Time27 ns35 ns-
Factory Pack Quantity250070-
SubcategoryDiscrete Semiconductor ModulesMOSFETs-
TradenamePolar--
Typical Turn Off Delay Time78 ns65 ns-
Typical Turn On Delay Time25 ns25 ns-
Vds Drain Source Breakdown Voltage1200 V1 kV-
Vgs th Gate Source Threshold Voltage2.5 V--
Technology-Si-
Number of Channels-1 Channel-
Channel Mode-Enhancement-
Height-2.38 mm-
Length-6.73 mm-
Series-IXTY1R4N100-
Transistor Type-1 N-Channel-
Width-6.22 mm-
Unit Weight-0.012346 oz-
Manufacturer Part # Description RFQ
Littelfuse
Littelfuse
IXTY1R4N120PHV Discrete Semiconductor Modules Disc Mosfet N-CH Std-Polar TO-252D
IXTY1R4N120P-TRL Discrete Semiconductor Modules Polar Power MOSFET
IXTY1R4N100P MOSFET 1.4 Amps 1000V 11 Rds
IXTY1R4N120P MOSFET N-CH 1200V 1.4A TO-252
IXTY1R4N120PHV MOSFET N-CH
IXTY1R4N100P MOSFET 1.4 Amps 1000V 11 Rds
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