PartNumber | IXYP30N120C3 | IXYP20N65C3D1M | IXYP30N65C3 |
Description | IGBT Transistors GenX3 1200V XPT IGBT | IGBT Transistors 650V/18A XPT IGBT C3 Copacked TO-220 | IGBT Transistors DISC IGBT XPT-GENX3 |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Technology | Si | Si | Si |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Mounting Style | Through Hole | Through Hole | Through Hole |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 1200 V | 650 V | 650 V |
Collector Emitter Saturation Voltage | 3.7 V | 2.27 V | 2.35 V |
Maximum Gate Emitter Voltage | 30 V | 30 V | 20 V |
Continuous Collector Current at 25 C | 75 A | 18 A | 60 A |
Pd Power Dissipation | 500 W | 50 W | 270 W |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Series | IXYP30N120 | IXYP20N65 | - |
Packaging | Tube | Tube | - |
Continuous Collector Current Ic Max | 75 A | 18 A | 118 A |
Brand | IXYS | IXYS | IXYS |
Gate Emitter Leakage Current | 100 nA | 100 nA | 100 nA |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | IGBTs | IGBTs | IGBTs |
Tradename | XPT | XPT | - |
Unit Weight | 0.211644 oz | 0.211644 oz | - |
RoHS | - | Y | - |