PartNumber | IXYA20N65C3 | IXYA20N65C3-TRL | IXYA20N65B3 |
Description | IGBT Transistors DISC IGBT XPT-GENX3 | IGBT Transistors IXYA20N65C3 TRL | IGBT |
Manufacturer | IXYS | IXYS | - |
Product Category | IGBT Transistors | IGBT Transistors | - |
Technology | Si | Si | - |
Package / Case | TO-263AA-3 | TO-263-3 | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 650 V | 650 V | - |
Collector Emitter Saturation Voltage | 2.27 V | 2.5 V | - |
Maximum Gate Emitter Voltage | 20 V | 20 V | - |
Continuous Collector Current at 25 C | 50 A | 50 A | - |
Pd Power Dissipation | 230 W | 230 W | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Packaging | Tube | Reel | - |
Continuous Collector Current Ic Max | 105 A | 20 A | - |
Brand | IXYS | IXYS | - |
Gate Emitter Leakage Current | 100 nA | - | - |
Product Type | IGBT Transistors | IGBT Transistors | - |
Factory Pack Quantity | 50 | 800 | - |
Subcategory | IGBTs | IGBTs | - |
RoHS | - | Y | - |