PartNumber | IXYA20N65C3D1 | IXYA20N65C3 | IXYA20N65C3-TRL |
Description | IGBT Transistors DISC IGBT XPT-GENX3 | IGBT Transistors DISC IGBT XPT-GENX3 | IGBT Transistors IXYA20N65C3 TRL |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Technology | Si | Si | Si |
Package / Case | TO-263AA-3 | TO-263AA-3 | TO-263-3 |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 650 V | 650 V | 650 V |
Collector Emitter Saturation Voltage | 2.27 V | 2.27 V | 2.5 V |
Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
Continuous Collector Current at 25 C | 50 A | 50 A | 50 A |
Pd Power Dissipation | 200 W | 230 W | 230 W |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Continuous Collector Current Ic Max | 105 A | 105 A | 20 A |
Brand | IXYS | IXYS | IXYS |
Gate Emitter Leakage Current | 100 nA | 100 nA | - |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 50 | 50 | 800 |
Subcategory | IGBTs | IGBTs | IGBTs |
Packaging | - | Tube | Reel |
RoHS | - | - | Y |