PartNumber | IXYH24N170CV1 | IXYH24N170C | IXYH24N90C3 |
Description | Discrete Semiconductor Modules Disc IGBT XPT-Hi Voltage TO-247AD | IGBT Transistors 1700V/58A High Volt | IGBT Transistors GenX3 900V XPT IGBTs |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | Discrete Semiconductor Modules | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | - |
Product | Diode Power Modules | - | - |
Type | High Voltage | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247AD-3 | TO-247AD-3 |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Packaging | Tube | - | Tube |
Configuration | Single | Single | Single |
Brand | IXYS | IXYS | IXYS |
Transistor Polarity | N-Channel | - | - |
Fall Time | 78 ns | - | - |
Id Continuous Drain Current | 58 A | - | - |
Pd Power Dissipation | 500 W | 500 W | 240 W |
Product Type | Discrete Semiconductor Modules | IGBT Transistors | IGBT Transistors |
Rise Time | 33 ns | - | - |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | Discrete Semiconductor Modules | IGBTs | IGBTs |
Tradename | XPT | - | XPT |
Typical Turn Off Delay Time | 155 ns | - | - |
Typical Turn On Delay Time | 12 ns | - | - |
Vds Drain Source Breakdown Voltage | 1700 V | - | - |
Vgs th Gate Source Threshold Voltage | 3 V | - | - |
Technology | - | Si | Si |
Collector Emitter Voltage VCEO Max | - | 1700 V | 900 V |
Collector Emitter Saturation Voltage | - | 3.5 V | 2.3 V |
Maximum Gate Emitter Voltage | - | 20 V | 30 V |
Continuous Collector Current at 25 C | - | 58 A | 46 A |
Series | - | High Voltage | IXYH24N90 |
Continuous Collector Current Ic Max | - | 58 A | 46 A |
Gate Emitter Leakage Current | - | 25 uA | 100 nA |
Unit Weight | - | 0.211644 oz | 1.340411 oz |