PartNumber | IXYH8N250CHV | IXYH80N90C3 | IXYH82N120C3 |
Description | Discrete Semiconductor Modules Disc IGBT XPT-Hi Voltage TO-247AD | IGBT Transistors DISC IGBT XPT-GENX3 | IGBT Transistors XPT IGBT C3-Class 1200V/160A |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | Discrete Semiconductor Modules | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | Y |
Product | Power Semiconductor Modules | - | - |
Type | High Voltage | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247HV-3 | TO-247AD-3 | TO-247AD-3 |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 175 C | - | + 150 C |
Packaging | Tube | - | Tube |
Configuration | Single | - | Single |
Brand | IXYS | IXYS | IXYS |
Transistor Polarity | N-Channel | - | - |
Fall Time | 86 ns | - | - |
Id Continuous Drain Current | 29 A | - | - |
Pd Power Dissipation | 280 W | - | 1040 W |
Product Type | Discrete Semiconductor Modules | IGBT Transistors | IGBT Transistors |
Rise Time | 5 ns | - | - |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | Discrete Semiconductor Modules | IGBTs | IGBTs |
Tradename | XPT | - | XPT |
Typical Turn Off Delay Time | 180 ns | - | - |
Typical Turn On Delay Time | 11 ns | - | - |
Vds Drain Source Breakdown Voltage | 2500 V | - | - |
Vgs th Gate Source Threshold Voltage | 3 V | - | - |
Technology | - | Si | Si |
Series | - | Planar | IXYH82N120 |
Unit Weight | - | 0.225753 oz | 1.340411 oz |
Collector Emitter Voltage VCEO Max | - | - | 1200 V |
Collector Emitter Saturation Voltage | - | - | 2.75 V |
Maximum Gate Emitter Voltage | - | - | 30 V |
Continuous Collector Current at 25 C | - | - | 160 A |
Continuous Collector Current Ic Max | - | - | 160 A |
Gate Emitter Leakage Current | - | - | 100 nA |