PartNumber | IXYN300N65A3 | IXYN30N170CV1 | IXYN35N100 |
Description | Discrete Semiconductor Modules Disc IGBT XPT-GenX3 SOT-227B(mini | IGBT Modules 1700V/85A High Voltage XPT IGBT | |
Manufacturer | IXYS | IXYS | - |
Product Category | Discrete Semiconductor Modules | IGBT Modules | - |
RoHS | Y | Y | - |
Product | Power Semiconductor Modules | IGBT Silicon Modules | - |
Type | GenX3 | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Mounting Style | Screw Mount | Chassis Mount | - |
Package / Case | SOT-227B-4 | Module | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Packaging | Tube | Tube | - |
Configuration | Single | Single Dual Emitter | - |
Brand | IXYS | IXYS | - |
Transistor Polarity | N-Channel | - | - |
Fall Time | 160 ns | - | - |
Id Continuous Drain Current | 470 A | - | - |
Pd Power Dissipation | 1500 W | 680 W | - |
Product Type | Discrete Semiconductor Modules | IGBT Modules | - |
Rise Time | 125 ns | - | - |
Factory Pack Quantity | 10 | 10 | - |
Subcategory | Discrete Semiconductor Modules | IGBTs | - |
Tradename | XPT | XPT | - |
Typical Turn Off Delay Time | 190 ns | - | - |
Typical Turn On Delay Time | 42 ns | - | - |
Vds Drain Source Breakdown Voltage | 650 V | - | - |
Vgs th Gate Source Threshold Voltage | 3 V | - | - |
Collector Emitter Voltage VCEO Max | - | 1700 V | - |
Collector Emitter Saturation Voltage | - | 3 V | - |
Continuous Collector Current at 25 C | - | 88 A | - |
Gate Emitter Leakage Current | - | 100 nA | - |
Series | - | High Voltage | - |
Maximum Gate Emitter Voltage | - | 20 V | - |