PartNumber | IXYP15N65C3 | IXYP15N65C3D1 | IXYP15N65C3D1M |
Description | IGBT Transistors DISC IGBT XPT-GENX3 | IGBT Transistors DISC IGBT XPT-GENX3 | IGBT Transistors 650V/16A XPT IGBT C3 Copacked TO-220 |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Series | Planar | - | IXYP15N65 |
Packaging | Tube | Tube | Tube |
Brand | IXYS | IXYS | IXYS |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | IGBTs | IGBTs | IGBTs |
Tradename | XPT, GenX3 | XPT, GenX3 | XPT |
Unit Weight | 0.063493 oz | - | 0.211644 oz |
Package / Case | - | - | TO-220-3 |
Mounting Style | - | - | Through Hole |
Configuration | - | - | Single |
Collector Emitter Voltage VCEO Max | - | - | 650 V |
Collector Emitter Saturation Voltage | - | - | 1.96 V |
Maximum Gate Emitter Voltage | - | - | 30 V |
Continuous Collector Current at 25 C | - | - | 16 A |
Pd Power Dissipation | - | - | 48 W |
Minimum Operating Temperature | - | - | - 55 C |
Maximum Operating Temperature | - | - | + 175 C |
Continuous Collector Current Ic Max | - | - | 16 A |
Gate Emitter Leakage Current | - | - | 100 nA |