PartNumber | IXZ2210N50L2 | IXZ210N50L2 | IXZH10N50L2B |
Description | RF MOSFET Transistors IXZ2210N50L2 10A 500V N Channel Dual ZMOS Linear MOSFET | RF MOSFET Transistors IXZ210N50L2 10A 500V N Channel ZMOS Linear MOSFET | MOSFET IXZH10N50L2B 10A 500V TO-247 w/Substrate Linear RightGate |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | RF MOSFET Transistors | RF MOSFET Transistors | MOSFET |
RoHS | Y | Y | Y |
Transistor Polarity | Dual N-Channel | N-Channel | N-Channel |
Technology | Si | Si | Si |
Id Continuous Drain Current | 10 A | 10 A | 10 A |
Vds Drain Source Breakdown Voltage | 500 V | 500 V | 500 V |
Rds On Drain Source Resistance | 1 Ohms | 1 Ohms | 1 Ohms |
Output Power | 270 W | 390 W | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Mounting Style | SMD/SMT | SMD/SMT | Through Hole |
Package / Case | SMD-8 | SMD-6 | TO-247AD-3 |
Packaging | Tube | Tube | Tube |
Operating Frequency | 2 MHz to 110 MHz | 2 MHz to 110 MHz | - |
Series | IXZ221 | - | IXZH10 |
Type | RF Power MOSFET | RF Power MOSFET | - |
Brand | IXYS | IXYS | IXYS |
Forward Transconductance Min | 3.1 S | 3 S | 3.1 S |
Number of Channels | 2 Channel | 1 Channel | 1 Channel |
Pd Power Dissipation | 270 W | - | 200 W |
Product Type | RF MOSFET Transistors | RF MOSFET Transistors | MOSFET |
Factory Pack Quantity | 20 | 30 | 30 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Vgs th Gate Source Threshold Voltage | 4 V | 4 V | 4 V |
Qg Gate Charge | - | - | - |
Configuration | - | - | Single |
Channel Mode | - | - | Enhancement |
Transistor Type | - | - | 1 N-Channel |
Fall Time | - | - | 5 ns |
Rise Time | - | - | 3 ns |
Typical Turn Off Delay Time | - | - | 4 ns |
Typical Turn On Delay Time | - | - | 4 ns |