PartNumber | JAN2N3019S | Jan2N3019 | Jan2N3019/TR |
Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | N | N | N |
Packaging | Bulk | Tray | - |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1 | 1 | 1 |
Subcategory | Transistors | Transistors | Transistors |
Technology | - | Si | Si |
Mounting Style | - | Through Hole | Through Hole |
Package / Case | - | TO-5-3 | TO-39-3 |
Transistor Polarity | - | NPN | NPN |
Configuration | - | Single | Single |
Collector Emitter Voltage VCEO Max | - | 80 V | 80 V |
Collector Base Voltage VCBO | - | 140 V | 140 V |
Emitter Base Voltage VEBO | - | 7 V | 7 V |
Collector Emitter Saturation Voltage | - | 200 mV | 0.5 V |
Maximum DC Collector Current | - | 1 A | 1 A |
Minimum Operating Temperature | - | - 65 C | - 65 C |
Maximum Operating Temperature | - | + 200 C | + 200 C |
Pd Power Dissipation | - | 800 mW | 800 mW |
DC Current Gain hFE Max | - | - | 300 at 500 mA, 10 V |
DC Collector/Base Gain hfe Min | - | - | 15 at 1 A, 10 V |