PartNumber | JANSF2N2369A | JANSF2N2369AUBC | JANSF2N2369AUA |
Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT RH Small-Signal BJT |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | N | N | N |
Packaging | Tray | Reel | Tray |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1 | 100 | 1 |
Subcategory | Transistors | Transistors | Transistors |
Technology | - | Si | - |
Mounting Style | - | Through Hole | - |
Package / Case | - | TO-39-3 | - |
Transistor Polarity | - | NPN | - |
Configuration | - | Single | - |
Collector Emitter Voltage VCEO Max | - | 80 V | - |
Collector Base Voltage VCBO | - | 140 V | - |
Emitter Base Voltage VEBO | - | 7 V | - |
Collector Emitter Saturation Voltage | - | 0.5 V | - |
Maximum DC Collector Current | - | 1 A | - |
Minimum Operating Temperature | - | - 65 C | - |
Maximum Operating Temperature | - | + 200 C | - |
DC Current Gain hFE Max | - | 300 at 500 mA, 10 V | - |
DC Collector/Base Gain hfe Min | - | 15 at 1 A, 10 V | - |
Pd Power Dissipation | - | 0.8 W | - |