 |  | | |
| PartNumber | Jan2N2605 | Jan2N2605/TR | JAN2N2608 |
| Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT | INSTOCK |
| Manufacturer | Microchip | Microchip | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | N | N | - |
| Packaging | Bulk | - | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1 | 1 | - |
| Subcategory | Transistors | Transistors | - |
| Technology | - | Si | - |
| Mounting Style | - | Through Hole | - |
| Package / Case | - | TO-206AB-3 | - |
| Transistor Polarity | - | PNP | - |
| Configuration | - | Single | - |
| Collector Emitter Voltage VCEO Max | - | 60 V | - |
| Collector Base Voltage VCBO | - | 70 V | - |
| Emitter Base Voltage VEBO | - | 6 V | - |
| Collector Emitter Saturation Voltage | - | 0.3 V | - |
| Maximum DC Collector Current | - | 30 mA | - |
| Minimum Operating Temperature | - | - 65 C | - |
| Maximum Operating Temperature | - | + 200 C | - |
| DC Current Gain hFE Max | - | 450 at 500 uA, 5 V | - |
| DC Collector/Base Gain hfe Min | - | 30 at 10 mA, 5 V | - |
| Pd Power Dissipation | - | 400 mW | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Microchip / Microsemi |
Jan2N2605 | Bipolar Transistors - BJT Small-Signal BJT | |
| Jan2N2605/TR | Bipolar Transistors - BJT | ||
| JAN2N2609 | New and Original | ||
| JAN2N2608 | INSTOCK |