Jan2N6989

Jan2N6989/TR vs Jan2N6989 vs Jan2N6989U

 
PartNumberJan2N6989/TRJan2N6989Jan2N6989U
DescriptionBipolar Transistors - BJTMOSFET BJTsMOSFET Small-Signal BJT
ManufacturerMicrochipMicrochip-
Product CategoryBipolar Transistors - BJTMOSFET-
RoHSNN-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-116-14TO-116-14-
Transistor PolarityNPN--
ConfigurationQuad--
Collector Emitter Voltage VCEO Max50 V--
Collector Base Voltage VCBO75 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage0.3 V--
Maximum DC Collector Current800 mA--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 200 C--
DC Current Gain hFE Max325 at 1 mA, 10 V--
BrandMicrochip / MicrosemiMicrochip / Microsemi-
DC Collector/Base Gain hfe Min30 at 500 mA, 10 V--
Pd Power Dissipation1.5 W--
Product TypeBJTs - Bipolar TransistorsMOSFET-
Factory Pack Quantity11-
SubcategoryTransistorsMOSFETs-
Packaging-Tube-
Unit Weight-0.014110 oz-
Manufacturer Part # Description RFQ
Microchip / Microsemi
Microchip / Microsemi
Jan2N6989/TR Bipolar Transistors - BJT
Jan2N6989 MOSFET BJTs
Jan2N6989U MOSFET Small-Signal BJT
Jan2N6989U/TR Bipolar Transistors - BJT
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