PartNumber | Jantx2N5415 | Jantx2N5416 | Jantx2N5415S |
Description | Bipolar Transistors - BJT Power BJT | Bipolar Transistors - BJT Power BJT | Bipolar Transistors - BJT Power BJT |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | N | N | N |
Packaging | Bulk | Bulk | Bulk |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1 | 1 | 1 |
Subcategory | Transistors | Transistors | Transistors |
Technology | - | Si | - |
Mounting Style | - | Through Hole | - |
Package / Case | - | TO-205AD-3 | - |
Transistor Polarity | - | PNP | - |
Configuration | - | Single | - |
Collector Emitter Voltage VCEO Max | - | 300 V | - |
Collector Base Voltage VCBO | - | 300 V | - |
Emitter Base Voltage VEBO | - | 6 V | - |
Collector Emitter Saturation Voltage | - | 2 V | - |
Minimum Operating Temperature | - | - 65 C | - |
Maximum Operating Temperature | - | + 200 C | - |
DC Current Gain hFE Max | - | 120 | - |
Continuous Collector Current | - | 1 A | - |
DC Collector/Base Gain hfe Min | - | 15 | - |
Pd Power Dissipation | - | 750 mW | - |
Unit Weight | - | 0.014110 oz | - |