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| PartNumber | Jantxv2N3019 | JANTXV2N3019S | Jantxv2N3019/TR |
| Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | N | N | N |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-5-3 | - | TO-39-3 |
| Transistor Polarity | NPN | - | NPN |
| Configuration | Single | - | Single |
| Collector Emitter Voltage VCEO Max | 80 V | - | 80 V |
| Collector Base Voltage VCBO | 140 V | - | 140 V |
| Emitter Base Voltage VEBO | 7 V | - | 7 V |
| Collector Emitter Saturation Voltage | 200 mV | - | 0.5 V |
| Maximum DC Collector Current | 1 A | - | 1 A |
| Minimum Operating Temperature | - 65 C | - | - 65 C |
| Maximum Operating Temperature | + 200 C | - | + 200 C |
| Packaging | Tray | Bulk | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Pd Power Dissipation | 800 mW | - | 800 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | Transistors | Transistors | Transistors |
| DC Current Gain hFE Max | - | - | 300 at 500 mA, 10 V |
| DC Collector/Base Gain hfe Min | - | - | 15 at 1 A, 10 V |