PartNumber | KSB1116AGBU | KSB1116ALTA | KSB1116AGTA |
Description | Bipolar Transistors - BJT PNP Epitaxial Sil | Bipolar Transistors - BJT PNP Epitaxial Transistor | Bipolar Transistors - BJT PNP Epitaxial Sil |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | T | Y |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-92-3 | TO-92-3 | TO-92-3 Kinked Lead |
Transistor Polarity | PNP | PNP | PNP |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | - 60 V | - 60 V | - 60 V |
Collector Base Voltage VCBO | - 80 V | - 80 V | - 80 V |
Emitter Base Voltage VEBO | - 6 V | - 6 V | - 6 V |
Collector Emitter Saturation Voltage | - 0.2 V | - 0.2 V | - 0.2 V |
Maximum DC Collector Current | 1 A | 1 A | 1 A |
Gain Bandwidth Product fT | 120 MHz | 120 MHz | 120 MHz |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Series | KSB1116A | - | KSB1116A |
DC Current Gain hFE Max | 400 | 400 | 400 |
Height | 5.33 mm | 5.33 mm | 4.7 mm |
Length | 5.2 mm | 5.2 mm | 4.7 mm |
Packaging | Bulk | Ammo Pack | Ammo Pack |
Width | 4.19 mm | 4.19 mm | 3.93 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Continuous Collector Current | - 1 A | - 1 A | - 1 A |
DC Collector/Base Gain hfe Min | 135 | 135 | 135 |
Pd Power Dissipation | 750 mW | 750 mW | 750 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1000 | 2000 | 2000 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 0.006286 oz | 0.008466 oz | 0.008466 oz |
Part # Aliases | - | - | KSB1116AGTA_NL |