 |  | | |
| PartNumber | KSC1008YBU | KSC1008Y | KSC1008Y.O |
| Description | Bipolar Transistors - BJT NPN Epitaxial Sil | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-92-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 60 V | - | - |
| Collector Base Voltage VCBO | 80 V | - | - |
| Emitter Base Voltage VEBO | 8 V | - | - |
| Collector Emitter Saturation Voltage | 0.2 V | - | - |
| Maximum DC Collector Current | 0.7 A | - | - |
| Gain Bandwidth Product fT | 50 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | KSC1008 | - | - |
| DC Current Gain hFE Max | 400 | - | - |
| Height | 4.7 mm | - | - |
| Length | 4.7 mm | - | - |
| Packaging | Bulk | - | - |
| Width | 3.93 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Continuous Collector Current | 0.7 A | - | - |
| DC Collector/Base Gain hfe Min | 40 | - | - |
| Pd Power Dissipation | 800 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 10000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | KSC1008YBU_NL | - | - |
| Unit Weight | 0.006314 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
KSC1008YTA | Bipolar Transistors - BJT NPN Epitaxial Transistor | |
| KSC1008YBU | Bipolar Transistors - BJT NPN Epitaxial Sil | ||
| KSC1008YBU;OBU | New and Original | ||
| KSC1008YTA_Q | Bipolar Transistors - BJT NPN Epitaxial Transisto | ||
| KSC1008Y | New and Original | ||
| KSC1008Y.O | New and Original | ||
| KSC1008YBU + | New and Original | ||
| KSC1008YCTA | New and Original | ||
ON Semiconductor |
KSC1008YTF | TRANS NPN 60V 0.7A TO-92 | |
| KSC1008YTA | TRANS NPN 60V 0.7A TO-92 | ||
| KSC1008YBU | TRANS NPN 60V 0.7A TO-92 |