 |  | | |
| PartNumber | KSC2316YTA | KSC2316YTA_Q | KSC2316Y |
| Description | Bipolar Transistors - BJT NPN Epitaxial Transistor | Bipolar Transistors - BJT NPN Epitaxial Transisto | |
| Manufacturer | ON Semiconductor | - | CJ |
| Product Category | Bipolar Transistors - BJT | - | Transistors (BJT) - Single |
| RoHS | Y | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-92-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 120 V | - | - |
| Collector Base Voltage VCBO | 120 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 1 V | - | - |
| Maximum DC Collector Current | 0.8 A | - | - |
| Gain Bandwidth Product fT | 120 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | KSC2316 | - | - |
| DC Current Gain hFE Max | 240 | - | - |
| Height | 8 mm | - | - |
| Length | 4.9 mm | - | - |
| Packaging | Ammo Pack | - | - |
| Width | 3.9 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Continuous Collector Current | 0.8 A | - | - |
| DC Collector/Base Gain hfe Min | 80 | - | - |
| Pd Power Dissipation | 900 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | KSC2316YTA_NL | - | - |
| Unit Weight | 0.013090 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
KSC2316YTA | Bipolar Transistors - BJT NPN Epitaxial Transistor | |
| KSC2316YTA_Q | Bipolar Transistors - BJT NPN Epitaxial Transisto | ||
| KSC2316YTR | New and Original | ||
| KSC2316Y | New and Original | ||
ON Semiconductor |
KSC2316YBU | TRANS NPN 120V 0.8A TO-92L | |
| KSC2316YTA | TRANS NPN 120V 0.8A TO-92L |