 | |  | |
| PartNumber | KSC2330YBU | KSC2330YTA | KSC2330YTA_Q |
| Description | Bipolar Transistors - BJT NPN Epitaxial Sil | Bipolar Transistors - BJT NPN Epitaxial Transistor | Bipolar Transistors - BJT NPN Epitaxial Transisto |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-92-3 | TO-92-3 | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 300 V | 300 V | - |
| Collector Base Voltage VCBO | 300 V | 300 V | - |
| Emitter Base Voltage VEBO | 7 V | 7 V | - |
| Collector Emitter Saturation Voltage | 0.5 V | 0.5 V | - |
| Maximum DC Collector Current | 0.1 A | 0.1 A | - |
| Gain Bandwidth Product fT | 50 MHz | 50 MHz | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| DC Current Gain hFE Max | 240 | 240 | - |
| Height | 8 mm | 8 mm | - |
| Length | 4.9 mm | 4.9 mm | - |
| Packaging | Bulk | Ammo Pack | - |
| Width | 3.9 mm | 3.9 mm | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| DC Collector/Base Gain hfe Min | 40 | 40 | - |
| Pd Power Dissipation | 1 W | 1 W | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 500 | 2000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.008466 oz | 0.013090 oz | - |
| Series | - | KSC2330 | - |
| Part # Aliases | - | KSC2330YTA_NL | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
KSC2330YBU | Bipolar Transistors - BJT NPN Epitaxial Sil | |
| KSC2330YTA | Bipolar Transistors - BJT NPN Epitaxial Transistor | ||
| KSC2330YTA_Q | Bipolar Transistors - BJT NPN Epitaxial Transisto | ||
ON Semiconductor |
KSC2330YBU | TRANS NPN 300V 0.1A TO-92L | |
| KSC2330YTA | TRANS NPN 300V 0.1A TO-92L |