| PartNumber | KSC2688YS | KSC2682OS | KSC2682YS |
| Description | Bipolar Transistors - BJT NPN Epitaxial Sil | Bipolar Transistors - BJT NPN Epitaxial Sil | Bipolar Transistors - BJT NPN Epitaxial Sil |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | Y |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-126-3 | TO-126-3 | TO-126-3 |
| Transistor Polarity | NPN | NPN | NPN |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 300 V | 180 V | 180 V |
| Collector Base Voltage VCBO | 300 V | 180 V | 180 V |
| Emitter Base Voltage VEBO | 5 V | 5 V | 5 V |
| Collector Emitter Saturation Voltage | 1.5 V | - | - |
| Maximum DC Collector Current | 0.2 A | 0.1 A | 0.1 A |
| Gain Bandwidth Product fT | 80 MHz | 200 MHz | 200 MHz |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| DC Current Gain hFE Max | 250 | 320 | 320 |
| Height | 11 mm | 11 mm | 11 mm |
| Length | 8 mm | 8 mm | 8 mm |
| Packaging | Bulk | Bulk | Bulk |
| Width | 3.25 mm | 3.25 mm | 3.25 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| DC Collector/Base Gain hfe Min | 40 | - | - |
| Pd Power Dissipation | 1250 mW | 1.2 W | 1.2 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 250 | 250 | 250 |
| Subcategory | Transistors | Transistors | Transistors |
| Part # Aliases | KSC2688YS_NL | - | KSC2682YS_NL |
| Unit Weight | 0.026843 oz | 0.026843 oz | 0.026843 oz |
| Continuous Collector Current | - | 0.1 A | 0.1 A |