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| PartNumber | KSC2690AYSTU | KSC2690AYSTSTU | KSC2690AYSTU(ROHS) |
| Description | Bipolar Transistors - BJT NPN Si Transistor Epitaxial | TRANS NPN 160V 1.2A TO-126 | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-126-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 160 V | - | - |
| Collector Base Voltage VCBO | 160 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 0.4 V | - | - |
| Maximum DC Collector Current | 1.2 A | - | - |
| Gain Bandwidth Product fT | 155 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | KSC2690A | - | - |
| DC Current Gain hFE Max | 320 | - | - |
| Height | 11 mm | - | - |
| Length | 8 mm | - | - |
| Packaging | Tube | - | - |
| Width | 3.25 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Continuous Collector Current | 1.2 A | - | - |
| DC Collector/Base Gain hfe Min | 60 | - | - |
| Pd Power Dissipation | 1.2 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 1920 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.026843 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
KSC2690AYSTU | Bipolar Transistors - BJT NPN Si Transistor Epitaxial | |
ON Semiconductor |
KSC2690AYSTSTU | TRANS NPN 160V 1.2A TO-126 | |
| KSC2690AYSTU | TRANS NPN 160V 1.2A TO-126 | ||
| KSC2690AYSTU(ROHS) | New and Original |