PartNumber | KSC4010OTU | KSC4010RTU |
Description | Bipolar Transistors - BJT NPN Epitaxial Sil | Bipolar Transistors - BJT NPN Epitaxial Sil |
Manufacturer | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-3P-3 | TO-3P-3 |
Transistor Polarity | NPN | NPN |
Configuration | Single | Single |
Collector Emitter Voltage VCEO Max | 120 V | 120 V |
Collector Base Voltage VCBO | 120 V | 120 V |
Emitter Base Voltage VEBO | 5 V | 5 V |
Maximum DC Collector Current | 6 A | 6 A |
Gain Bandwidth Product fT | 30 MHz | 30 MHz |
Minimum Operating Temperature | - 50 C | - 50 C |
Maximum Operating Temperature | + 150 C | + 150 C |
DC Current Gain hFE Max | 160 | 160 |
Height | 19.9 mm | 19.9 mm |
Length | 15.6 mm | 15.6 mm |
Packaging | Tube | Tube |
Width | 4.8 mm | 4.8 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Continuous Collector Current | 6 A | 6 A |
DC Collector/Base Gain hfe Min | 55 | 55 |
Pd Power Dissipation | 60 W | 60 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 30 | 30 |
Subcategory | Transistors | Transistors |
Unit Weight | 0.238311 oz | 0.238311 oz |