KSC530

KSC5302DTU vs KSC5305DFTTU vs KSC5305DTU

 
PartNumberKSC5302DTUKSC5305DFTTUKSC5305DTU
DescriptionBipolar Transistors - BJTBipolar Transistors - BJT NPN 400V/5A PottedBipolar Transistors - BJT NPN Sil Transisto
ManufacturerON SemiconductorON SemiconductorFAIRCHILD
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Single
RoHSYE-
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220F-3TO-220-3-
Transistor PolarityNPNNPNNPN
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max400 V400 V-
Collector Base Voltage VCBO800 V800 V-
Emitter Base Voltage VEBO12 V12 V-
Maximum DC Collector Current2 A5 A5 A
Minimum Operating Temperature- 55 C- 65 C- 65 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Height9.2 mm9.4 mm (Max)-
Length9.9 mm10.1 mm (Max)-
PackagingTubeTubeTube
Width4.5 mm4.7 mm (Max)-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Continuous Collector Current2 A-5 A
DC Collector/Base Gain hfe Min2022-
Pd Power Dissipation50 W75 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity501000-
SubcategoryTransistorsTransistors-
Unit Weight0.080072 oz0.080072 oz0.063493 oz
Collector Emitter Saturation Voltage-500 mV500 mV
Series-KSC5305DF-
Part # Aliases-KSC5305DFTTU_NL-
Part Aliases--KSC5305DTU_NL
Package Case--TO-220-3
Pd Power Dissipation--75 W
Collector Emitter Voltage VCEO Max--400 V
Collector Base Voltage VCBO--800 V
Emitter Base Voltage VEBO--12 V
DC Collector Base Gain hfe Min--22
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
KSC5302DTU Bipolar Transistors - BJT
KSC5305DFTTU Bipolar Transistors - BJT NPN 400V/5A Potted
ON Semiconductor
ON Semiconductor
KSC5305DTU Bipolar Transistors - BJT NPN Sil Transisto
KSC5305DFTTU Bipolar Transistors - BJT NPN 400V/5A Potted
KSC5302DTU TRANS NPN 400V 2A TO-220
KSC5302DITU Bipolar Transistors - BJT
KSC5305D New and Original
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